Research Mentor(s)

Patrick, David

Description

Scaling phenomena during submonolayer thin-film formation and growth has been a subject of interest for several decades, motivated in part by its relevance to understanding deposition and growth of technologically-important electrode and semiconductor materials. There are several models that effectively describe various scaling behaviors in regimes where the critical island size i* is very small (typically i* < 4 monomers). These models capture many essential properties of of submonolayer nucleation and growth in vacuum-deposited films quite well, however systems with large i* values such as those that occur during solution-phase nucleation remain unexplored due to the high computational cost of traditional approaches. Such systems are of particular interest for the fundamental understanding of the physics behind the growth of large, low-defect organic crystals via organic-vapor-liquid-solid deposition, which have novel semiconductor applications. Here we discuss a multiscale model that combines traditional mean field and classical nucleation theory approaches with a self-consistent treatment of i*, stochastic treatment of nucleation, and analytically calculated monomer diffusion via the 2D diffusion equation. This approach allows us to model large i* systems and compare scaling patterns to those of small i* systems.

Document Type

Event

Start Date

18-5-2020 12:00 AM

End Date

22-5-2020 12:00 AM

Department

Chemistry

Genre/Form

student projects, posters

Type

Image

Keywords

submonolayer, polycrystalline, thin film, nucleation, scaling, OVLS

Rights

Copying of this document in whole or in part is allowable only for scholarly purposes. It is understood, however, that any copying or publication of this document for commercial purposes, or for financial gain, shall not be allowed without the author’s written permission.

Language

English

Format

application/pdf

Included in

Chemistry Commons

Share

COinS
 
May 18th, 12:00 AM May 22nd, 12:00 AM

Submonolayer Nucleation in Ultrathin Liquid Films: Scaling Properties and the Effects of the Critical Nucleus Size

Scaling phenomena during submonolayer thin-film formation and growth has been a subject of interest for several decades, motivated in part by its relevance to understanding deposition and growth of technologically-important electrode and semiconductor materials. There are several models that effectively describe various scaling behaviors in regimes where the critical island size i* is very small (typically i* < 4 monomers). These models capture many essential properties of of submonolayer nucleation and growth in vacuum-deposited films quite well, however systems with large i* values such as those that occur during solution-phase nucleation remain unexplored due to the high computational cost of traditional approaches. Such systems are of particular interest for the fundamental understanding of the physics behind the growth of large, low-defect organic crystals via organic-vapor-liquid-solid deposition, which have novel semiconductor applications. Here we discuss a multiscale model that combines traditional mean field and classical nucleation theory approaches with a self-consistent treatment of i*, stochastic treatment of nucleation, and analytically calculated monomer diffusion via the 2D diffusion equation. This approach allows us to model large i* systems and compare scaling patterns to those of small i* systems.

 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.