Research Mentor(s)
Patrick, David
Description
Scaling phenomena during submonolayer thin-film formation and growth has been a subject of interest for several decades, motivated in part by its relevance to understanding deposition and growth of technologically-important electrode and semiconductor materials. There are several models that effectively describe various scaling behaviors in regimes where the critical island size i* is very small (typically i* < 4 monomers). These models capture many essential properties of of submonolayer nucleation and growth in vacuum-deposited films quite well, however systems with large i* values such as those that occur during solution-phase nucleation remain unexplored due to the high computational cost of traditional approaches. Such systems are of particular interest for the fundamental understanding of the physics behind the growth of large, low-defect organic crystals via organic-vapor-liquid-solid deposition, which have novel semiconductor applications. Here we discuss a multiscale model that combines traditional mean field and classical nucleation theory approaches with a self-consistent treatment of i*, stochastic treatment of nucleation, and analytically calculated monomer diffusion via the 2D diffusion equation. This approach allows us to model large i* systems and compare scaling patterns to those of small i* systems.
Document Type
Event
Start Date
18-5-2020 12:00 AM
End Date
22-5-2020 12:00 AM
Department
Chemistry
Genre/Form
student projects, posters
Subjects – Topical (LCSH)
Thin films; Surfaces (Technology); Chemistry, Physical and theoretical
Type
Image
Keywords
submonolayer, polycrystalline, thin film, nucleation, scaling, OVLS
Rights
Copying of this document in whole or in part is allowable only for scholarly purposes. It is understood, however, that any copying or publication of this document for commercial purposes, or for financial gain, shall not be allowed without the author’s written permission.
Language
English
Format
application/pdf
Included in
Submonolayer Nucleation in Ultrathin Liquid Films: Scaling Properties and the Effects of the Critical Nucleus Size
Scaling phenomena during submonolayer thin-film formation and growth has been a subject of interest for several decades, motivated in part by its relevance to understanding deposition and growth of technologically-important electrode and semiconductor materials. There are several models that effectively describe various scaling behaviors in regimes where the critical island size i* is very small (typically i* < 4 monomers). These models capture many essential properties of of submonolayer nucleation and growth in vacuum-deposited films quite well, however systems with large i* values such as those that occur during solution-phase nucleation remain unexplored due to the high computational cost of traditional approaches. Such systems are of particular interest for the fundamental understanding of the physics behind the growth of large, low-defect organic crystals via organic-vapor-liquid-solid deposition, which have novel semiconductor applications. Here we discuss a multiscale model that combines traditional mean field and classical nucleation theory approaches with a self-consistent treatment of i*, stochastic treatment of nucleation, and analytically calculated monomer diffusion via the 2D diffusion equation. This approach allows us to model large i* systems and compare scaling patterns to those of small i* systems.